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S2206 n-channel sic power mosfet bare die gate - source surge voltage (t surge ? 300nsec) v gss-surge *3 - 10 to 26 v v i d *1 29 a ? induction heating ? motor drives parameter value drain - source voltage t c = 25c l absolute maximum ratings (t a = 25c) v dss 650 continuous drain current range of storage temperature t stg - 55 to + 175 c i d,pulse *2 72 a gate - source voltage (dc) v gss - 6 to 22 v junction temperature t j 175 c pulsed drain current l features l application 1) low on-resistance 2) fast switching speed 3) fast reverse recovery 4) easy to parallel 5) simple to drive ? solar inverters ? dc/dc converters ? switch mode power supplies 650v 29a* 1 v dss i d r ds(on) (typ.) 120m w l inner circuit unit symbol (g) gate (d) drain (s) source *1 body diode (g) (s) (d) 1/11 2016.02 - rev.c data sheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
S2206 *1 limited only by maximum temperature allowed. *2 pw ? 10 ? s, duty cycle ? 1% *3 example of acceptable vgs waveform *4 pulsed static drain - source on - state resistance r ds(on) *4 v gs = 18v, i d = 10a m w t j = 25c - 120 156 t j = 125c - 149 - - w gate input resistance r g f = 1mhz, open drain - 13.8 v gate - source leakage current i gss - v gs = - 6v, v ds = 0v - - gate - source leakage current i gss + v gs = + 22v, v ds = 0v - - 100 na - 100 na gate threshold voltage v gs (th) v ds = v gs , i d = 3.3ma 1.6 2.8 4.0 drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 650 - ? a t j = 25c - 1 10 t j = 150c - 2 - zero gate voltage drain current i dss v ds = 650v, v gs = 0v unit min. typ. max. - v l electrical characteristics (t a = 25c) parameter symbol conditions values t surge t surge + 26v + 2 2 v 0v - 6v - 10v 2/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 v - 21 - gate plateau voltage v (plateau) v dd = 300v, i d = 10a - 10.4 - nc gate - source charge q gs *4 i d = 10a - 14 - gate - drain charge q gd *4 v gs = 18v total gate charge q g *4 v dd = 300v - 61 - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. ? j turn - off switching loss e off *4 - 41 - turn - on switching loss e on *4 v dd = 300v, i d = 10a v gs = 18v/0v r g = 0 w , l=500 ? h *e on includes diode reverse recovery - 61 - v gs = 18v/0v - 31 - turn - off delay time t d(off) *4 r l = 30 w - 60 - 13 - pf turn - on delay time t d(on) *4 v dd = 300v, i d = 10a - 22 - ns rise time t r *4 effective output capacitance, energy related c o(er) v gs = 0v v ds = 0v to 300v - 115 - fall time t f *4 r g = 0 w - 19 - s input capacitance c iss v gs = 0v - 1200 - pf output capacitance c oss transconductance g fs *4 v ds = 10v, i d = 10a - 2.7 - v ds = 500v - 90 - reverse transfer capacitance c rss f = 1mhz - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 3/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 - 53 - nc peak reverse recovery current i rrm *4 - 3.0 - a v reverse recovery time t rr *4 i f = 10a, v r = 400v di/dt = 160a/ ? s - 33 - ns reverse recovery charge q rr *4 forward voltage v sd *4 v gs = 0v, i s = 10a - 4.3 - a inverse diode direct current, pulsed i sm *2 - - 72 a inverse diode continuous, forward current i s *1 t c = 25c - - 29 l body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. 4/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l electrical characteristic curves fig.1 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] fig.3 t j = 150 c typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.4 t j = 150 c typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0 2 4 6 8 10 t a = 25oc pulsed v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v 10v 8v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 1 2 3 4 5 t a = 25oc pulsed v gs = 20v v gs = 18v v gs = 16v v gs = 12v v gs = 10v v gs = 8 v v gs = 14v 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0 2 4 6 8 10 t a = 150oc pulsed v gs = 10v v gs = 8v v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 1 2 3 4 5 t a = 150oc pulsed v gs = 8v v gs = 10v v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v 5/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l electrical characteristic curves 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed t a = 150oc t a = 75oc t a = 25oc t a = - 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 200 v ds = v gs i d = 3.3ma fig.5 typical transfer characteristics (i) drain current : i d [a] gate - source voltage : v gs [v] fig.7 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.8 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] 0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = - 25oc v ds = 10v pulsed fig.6 typical transfer characteristics (ii) drain current : i d [a] gate - source voltage : v gs [v] 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = - 25oc v ds = 10v pulsed 6/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l electrical characteristic curves 0 0.1 0.2 0.3 0.4 0.5 0.6 6 8 10 12 14 16 18 20 22 i d = 10a i d = 21a t a = 25oc pulsed 0 0.05 0.1 0.15 0.2 0.25 0.3 -50 0 50 100 150 200 v gs = 18v pulsed i d = 10a i d = 20a 0.1 1 0.1 1 10 100 v gs = 18v pulsed t a = 150oc t a = 125oc t a = 75oc t a = 25oc t a = - 25oc fig.9 static drain - source on - state resistance vs. gate - source voltage static drain - source on - state resistance : r ds(on) [ ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. junction temperature static drain - source on - state resistance : r ds(on) [ ] junction temperature : t j [oc] fig.11 static drain - source on - state resistance vs. drain current static drain - source on - state resistance : r ds(on) [ ] drain current : i d [a] 7/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l electrical characteristic curves 0 5 10 15 20 25 0 200 400 600 800 t a = 25oc 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 0 5 10 15 20 0 10 20 30 40 50 60 70 t a = 25oc v dd =300v i d = 10a pulsed fig.12 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.13 coss stored energy coss stored energy : e oss [j] drain - source voltage : v ds [v] fig.14 switching characteristics switching time : t [ns] drain current : i d [a] fig.15 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] 1 10 100 1000 10000 0.1 1 10 100 t f t d(on) t a = 25oc v dd = 300v v gs = 18v r g = 0 t r t d(off) 8/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l electrical characteristic curves 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 t a = 25oc v dd =300v v gs = 18v/0v r g = 0 l=500h e on e off fig.16 typical switching loss vs. drain - source voltage switching energy : e [j] drain - source voltage : v ds [v] fig.17 typical switching loss vs. drain current switching energy : e [j] drain - current : i d [a] fig.18 typical switching loss vs. external gate resistance switching energy : e [j] external gate resistance : r g [ ] 0 10 20 30 40 50 60 70 80 90 100 110 120 0 100 200 300 400 500 t a = 25oc i d =10a v gs = 18v/0v r g = 0 l=500h e on e off 0 50 100 150 200 0 5 10 15 20 25 30 t a = 25oc v dd =300v i d =10a v gs = 18v/0v l=500h e on e off 9/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l electrical characteristic curves 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 v gs = 0v pulsed t a = 150oc t a = 75oc t a = 25oc t a = - 25oc 10 100 1000 1 10 100 t a = 25oc di / dt = 160a / s v r = 400v v gs = 0v pulsed fig.19 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.20 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 10/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
S2206 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 switching energy measurement circuit fig.3-2 switching waveforms fig.4-1 reverse recovery time measurement circuit fig.4-2 reverse recovery waveform d.u.t. v surge i rr e on = i d v ds e off = i d v ds i d v ds same type device as d.u.t. d.u.t. i d 11/11 2016.02 - rev.c www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
r1 102 b www .rohm.com ? 2016 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified belo w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pr e v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) notes
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